The present stage of a series of numerical modelings of the plasma etching processes is overviewed. Physical, chemical and electrical linkage among modules describing low temperature plasma structure/ function in a reactor, the profile and local charging evolution in a hole/trench, and electrical device damage during etching will make it possible to prepare a technology computer aided design (TCAD) for the practical purpose of prediction and designing the etching process. This system will also help to determine device arrangement and size in system on a chip (SoC) in a closed integration system. TCAD will also provide a tool for discussing the etching processes between process engineers and device designers in the age of nanometer-scale device technology.

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